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FDS3670 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS3670 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDS3670 Rev B1 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 92 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 25 µA IGSSF Gate–Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage Current, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 22.5 4 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C –7.2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A TJ = 125 °C VGS = 6 V, ID = 5.7 A 0.022 0.039 0.024 0.030 0.060 0.033 Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 25 A gFS Forward Transconductance VDS = 5 V, ID = 6.3 A 31 S Dynamic Characteristics Ciss Input Capacitance 2490 pF Coss Output Capacitance 265 pF Crss Reverse Transfer Capacitance VDS = 50 V, V GS = 0 V, f = 1.0 MHz 80 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 16 26 ns tr Turn–On Rise Time 10 18 ns td(off) Turn–Off Delay Time 56 84 ns tf Turn–Off Fall Time VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 25 40 ns Qg Total Gate Charge 57 80 nC Qgs Gate–Source Charge 11 nC Qgd Gate–Drain Charge VDS = 50 V, ID = 25 A, VGS = 10 V 15 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.72 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1in 2 pad of 2 oz copper b) 105 °C/W when mounted on a 0.04 in 2 pad of 2 oz copper c) 125 °C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDS3670 |
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Аналогичное описание - FDS3670 |
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