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FDS3672 датащи(PDF) 1 Page - Fairchild Semiconductor

номер детали FDS3672
подробное описание детали  N-Channel PowerTrench MOSFET 100V, 7.5A, 22m?
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
March 2003
FDS3672 Rev. B
FDS3672
N-Channel PowerTrench® MOSFET
100V, 7.5A, 22m
Features
•rDS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A
•Qg(tot) = 28nC (Typ.), VGS = 10V
• Low Miller Charge
•Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82763
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
7.5
A
Continuous (TA = 25
oC, V
GS = 10V, R
θJA = 50
oC/W)
Continuous (TA = 100
oC, V
GS = 10V, R
θJA = 50
oC/W)
4.8
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
416
mJ
PD
Power dissipation
2.5
W
Derate above 25oC20
mW/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 150
oC
RθJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
50
oC/W
RθJA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
85
oC/W
RθJC
Thermal Resistance, Junction to Case (Note 2)
25
oC/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS3672
FDS3672
SO-8
330mm
12mm
2500 units
SO-8
Branding Dash
1
5
2
3
4
4
3
2
1
5
6
7
8


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