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FDS3680 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS3680 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS3680 Rev B1 (W) Typical Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 Qg, GATE CHARGE (nC) ID = 6A V DS = 15V 30 V 50V 0 500 1000 1500 2000 2500 3000 0 2040 6080 100 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS C OSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 125 oC/W TA = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TI ME (s e c) 1 S i n g l e P u l s e D = 0.5 0.1 0.05 0.02 0.01 0.2 D u t y C y c l e, D = t /t 1 2 R (t) = r(t) * R R = 125°C/ W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. |
Аналогичный номер детали - FDS3680 |
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Аналогичное описание - FDS3680 |
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