поискавой системы для электроныых деталей |
|
FDS3890 датащи(PDF) 2 Page - Fairchild Semiconductor |
|
FDS3890 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDS3890 Rev B(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Single Pulse Drain-Source Avalanche Energy VDD = 40 V, ID = 4.7 A 175 mJ IAR Maximum Drain-Source Avalanche Current 4.7 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 86 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.3 4 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 4.7 A VGS = 6.0 V, ID = 4.4 A VGS = 10 V, ID = 4.7 A, TJ = 125 °C 34 37 60 44 50 82 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 10 V, ID = 4.7 A 24 S Dynamic Characteristics Ciss Input Capacitance 1180 pF Coss Output Capacitance 171 pF Crss Reverse Transfer Capacitance VDS = 40 V, V GS = 0 V, f = 1.0 MHz 50 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 8 16 ns td(off) Turn–Off Delay Time 26 50 ns tf Turn–Off Fall Time VDD =40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 25 ns Qg Total Gate Charge 25 35 nC Qgs Gate–Source Charge 4.5 nC Qgd Gate–Drain Charge VDS = 40 V, ID = 4.7 A, VGS = 10 V 5.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.74 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1in 2 pad of 2 oz copper b) 125°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDS3890 |
|
Аналогичное описание - FDS3890 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |