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FDS4435A датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS4435A датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page FDS4435A Rev. D FDS4435A P-Channel Logic Level PowerTrench® MOSFET October 2001 Features -9 A, -30 V. R DS(ON) = 0.017 W @ VGS = -10 V R DS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low R DS(ON). High power and current handling capability. ã2001 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current - Continuous (Note 1a) -9 A - Pulsed -50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R θJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R θJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS4435A FDS4435A 13’’ 12mm 2500 units S D S S SO-8 D D D G 5 6 8 3 1 7 4 2 General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer appli- cations: load switching and power management, battery charging circuits, and DC/DC conversion. |
Аналогичный номер детали - FDS4435A |
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Аналогичное описание - FDS4435A |
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