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FDS4488 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS4488 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDS4488 Rev B (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 21 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –25 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.8 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 7.9 A VGS = 4.5 V, ID = 6.8 A VGS = 10 V, ID = 7.9 A, TJ=125 °C 15 21 22 22 30 35 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 10 V, ID = 7.9 A 24 S Dynamic Characteristics Ciss Input Capacitance 927 pF Coss Output Capacitance 241 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 97 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 7.4 15 ns tr Turn–On Rise Time 7.5 15 ns td(off) Turn–Off Delay Time 25 40 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 5 10 ns Qg Total Gate Charge 9.5 13 nC Qgs Gate–Source Charge 3.3 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 7.9 A, VGS = 5 V 3.1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 22 nS Qrr Diode Reverse Recovery Charge IF = 7.9 A, diF/dt = 100 A/µs 20 nC Notes : 1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design. a) 50°C/W when mounted on a 1in 2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDS4488 |
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Аналогичное описание - FDS4488 |
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