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FDS4501H датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS4501H датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS4501H Rev C(W) Typical Characteristics: Q2 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 -V DS , DRAIN-SOURCE VOLTAGE (V) -1.8V -2.0V -2.5V -1.5V V GS = -4.5V -3.0V 0.5 1 1.5 2 2.5 3 3.5 4 0 3 6 9 12 15 -I D, DRAIN CURRENT (A) V GS = -1.5V -2.0V -2.5V -4.5V -3.0V -1.8V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 T J , JUNCTION TEMPERATURE ( oC) I D = -2.4A V GS = -4.5V 0.02 0.04 0.06 0.08 0.1 0.12 0.14 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) I D = -1.2 A T A = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 -V GS, GATE TO SOURCE VOLTAGE (V) T A = 125 oC 25 oC V DS = - 5V -55 oC 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) T A = 125 oC 25 oC -55 oC V GS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS4501H |
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Аналогичное описание - FDS4501H |
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