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FDS4770 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS4770 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page March 2003 2003 Fairchild Semiconductor Corporation FDS4770 Rev B (W) FDS4770 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • 13.2 A, 40 V. R DS(ON) = 10.5 m Ω @ V GS = 10 V • Low gate charge (30 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D D D D S S S G Pin 1 SO-8 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 13.2 A – Pulsed 45 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.4 PD (Note 1c) 1.2 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4770 FDS4770 13’’ 11mm 2500 units |
Аналогичный номер детали - FDS4770 |
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Аналогичное описание - FDS4770 |
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