поискавой системы для электроныых деталей |
|
FDS4780 датащи(PDF) 3 Page - Fairchild Semiconductor |
|
FDS4780 датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page FDS4780 Rev B (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/µs 27 nS Qrr Diode Reverse Recovery Charge 58 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in 2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDS4780 |
|
Аналогичное описание - FDS4780 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |