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FDS5690 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS5690 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS5690 Rev. C Typical Characteristics (continued) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 125°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0 2 4 6 8 10 0 5 10 15 20 25 Qg, GATE CHARGE (nC) ID = 7A VDS = 10V 20V 30V 0 400 800 1200 1600 0 1020304050 60 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA=125 o C/W TA=25 o C 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 125 o C/W TA = 25 o C 10s |
Аналогичный номер детали - FDS5690 |
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Аналогичное описание - FDS5690 |
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