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FDS5690 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS5690 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDS5690 Rev. C FDS5690 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Motor drives March 2000 Features • 7 A, 60 V. R DS(on) = 0.028 Ω @ V GS = 10 V R DS(on) = 0.033 Ω @ V GS = 6 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • High power and current handling capability. 2000 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 7A - Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS5690 FDS5690 13’’ 12mm 2500 units 6 7 8 5 3 2 1 4 S D S S SO-8 D D D G |
Аналогичный номер детали - FDS5690 |
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Аналогичное описание - FDS5690 |
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