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FDS6162N7 датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6162N7 датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page FDS6162N7 Rev C2 (W) Typical Characteristics 0 10 20 30 40 50 60 0.00 0.25 0.50 0.75 1.00 1.25 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5V 2.0V VGS =4.5V 1.5V 3.0V 0.8 1 1.2 1.4 1.6 1.8 2 0 15 304560 ID, DRAIN CURRENT (A) VGS = 2.0V 3.0V 2.5V 4.5V 3.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 23 A VGS = 4.5V 0.002 0.004 0.006 0.008 0.01 0.012 12 345 VGS, GATE TO SOURCE VOLTAGE (V) ID = 11.5 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 60 11.2 1.4 1.6 1.82 VGS, GATE TO SOURCE VOLTAGE (V) TA =125 oC 25 oC -55 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS6162N7 |
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Аналогичное описание - FDS6162N7 |
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