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FDS6375 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6375 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDS6375 Rev. C FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Battery Protection February 1999 Features • -8.0 A, -20 V. R DS(on) = 0.024 Ω @ V GS = -4.5 V R DS(on) = 0.032 Ω @ V GS = -2.5 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • High power and current handling capability. ©1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8V ID Drain Current - Continuous (Note 1a) -8.0 A - Pulsed -50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6375 FDS6375 13’’ 12mm 2500 units S D S S SO-8 D D D G 5 6 8 3 1 7 4 2 |
Аналогичный номер детали - FDS6375 |
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Аналогичное описание - FDS6375 |
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