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FDS6614A датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6614A датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDS6614A Rev. C Features 9.3 A, 30 V. R DS(on) = 0.018 W @ VGS = 10 V R DS(on) = 0.025 W @ VGS = 4.5 V. Low gate charge (12nC typical). Fast switching speed. High performance trench technology for extremely low R DS(on). High power and current handling capability. ã1999 Fairchild Semiconductor Corporation January 2000 1 6 7 8 2 4 3 5 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current - Continuous (Note 1a) 9.3 A - Pulsed 40 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6614A FDS6614A 13’’ 12mm 2500 units S D S S SO-8 D D D G FDS6614A N-Channel Logic Level PowerTrench® MOSFET This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications DC/DC converter Load switch Motor drives General Description |
Аналогичный номер детали - FDS6614A |
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Аналогичное описание - FDS6614A |
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