поискавой системы для электроныых деталей |
|
FDS6670A датащи(PDF) 2 Page - Fairchild Semiconductor |
|
FDS6670A датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Electrical Characteristics (T A = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 30 V ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC 20 mV / oC I DSS Zero Gate Voltage Drain Current V DS = 24 V, VGS = 0 V 1 µA T J = 55°C 10 µA I GSSF Gate - Body Leakage, Forward V GS = 20 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = VGS, ID = 250 µA 1 1.6 3 V ∆V GS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC -4.5 mV / oC R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, I D = 13 A 0.0063 0.008 Ω T J =125°C 0.009 0.014 V GS = 4.5 V, I D = 10.5 A 0.0082 0.01 I D(ON) On-State Drain Current V GS = 10 V, VDS = 5 V 50 A g FS Forward Transconductance V DS = 15 V, I D = 13 A 50 S DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = 15 V, VGS = 0 V, f = 1.0 MHz 3200 pF C oss Output Capacitance 820 pF C rss Reverse Transfer Capacitance 400 pF SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DS = 10 V, I D= 1 A 15 27 ns t r Turn - On Rise Time V GS = 10 V , RGEN = 6 Ω 15 27 ns t D(off) Turn - Off Delay Time 85 105 ns t f Turn - Off Fall Time 42 68 ns Q g Total Gate Charge V DS = 15 V, I D = 13 A, 35 50 nC Q gs Gate-Source Charge V GS = 5 V 9 nC Q gd Gate-Drain Charge 16 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current 2.1 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 2.1 A (Note 2) 0.71 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDS6670A Rev.D1 c. 125 OC/W on a 0.006 in2 pad of 2oz copper. b. 105 OC/W on a 0.04 in2 pad of 2oz copper. a. 50 OC/W on a 1 in2 pad of 2oz copper. |
Аналогичный номер детали - FDS6670A |
|
Аналогичное описание - FDS6670A |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |