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FDS6675 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6675 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrench TM MOSFET General Description Features Absolute Maximum Ratings T A = 25 oC unless otherwise noted Symbol Parameter FDS6675 Units V DSS Drain-Source Voltage -30 V V GSS Gate-Source Voltage ±20 V I D Drain Current - Continuous (Note 1a) -11 A - Pulsed -50 P D Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 T J,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W FDS6675 Rev.C1 -11 A, -30 V. R DS(ON) = 0.014 Ω @ VGS = -10 V, R DS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low R DS(ON). High power and current handling capability. SOT-23 SuperSOT TM-8 SOIC-16 SO-8 SOT-223 SuperSOT TM-6 This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. 5 6 7 3 1 8 4 2 S D S S SO-8 D D D G pin 1 FDS 6675 © 1998 Fairchild Semiconductor Corporation |
Аналогичный номер детали - FDS6675 |
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Аналогичное описание - FDS6675 |
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