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FDS6679Z датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS6679Z датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDS6679Z Rev C(W) Typical Characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 70 Q g, GATE CHARGE (nC) I D = -13A V DS = -5V -10V -15V 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 -V DS, DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µs R DS(ON) LIMIT V GS = -10V SINGLE PULSE RθJA = 125 oC/W T A = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , TIME (sec) SINGLE PULSE RθJA = 125°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 125 o C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Аналогичный номер детали - FDS6679Z |
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Аналогичное описание - FDS6679Z |
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