поискавой системы для электроныых деталей |
|
FDS6679Z датащи(PDF) 2 Page - Fairchild Semiconductor |
|
FDS6679Z датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDS6679Z Rev C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C –22 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –25 V, VDS = 0 V –10 µA IGSSR Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C 4.9 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –13 A VGS = –4.5 V, ID = –11 A VGS=–4.5 V, ID =–13A, TJ=125 °C 7.2 10 10 9 13 13 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A gFS Forward Transconductance VDS = –5 V, ID = –13 A 43 S Dynamic Characteristics Ciss Input Capacitance 3803 pF Coss Output Capacitance 974 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 490 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 18 32 ns tr Turn–On Rise Time 9 18 ns td(off) Turn–Off Delay Time 92 147 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 54 86 ns Qg Total Gate Charge 67 94 nC Qgs Gate–Source Charge 11 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –13 A, VGS = –10 V 15 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V Notes: 1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design. a) 50°C/W (10 sec) 62.5°C/W steady state when mounted on a 1in 2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. |
Аналогичный номер детали - FDS6679Z |
|
Аналогичное описание - FDS6679Z |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |