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FDS6680S датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS6680S датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page FDS6680S Rev A (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25 °C 19 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 mA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 2 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 1 mA, Referenced to 25 °C -3.3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 11.5 A VGS = 4.5 V, ID = 9.5 A VGS=10 V, ID =11.5A, TJ=125 °C 9.5 13.5 17 11 16 23 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 15 V, ID = 11.5 A 27 S Dynamic Characteristics Ciss Input Capacitance 2010 pF Coss Output Capacitance 526 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 186 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 18 ns tr Turn–On Rise Time 10 18 ns td(off) Turn–Off Delay Time 34 55 ns tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 14 23 ns Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge 6.2 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 11.5 A, VGS = 5 V 5.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 3.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.45 0.6 0.7 V trr Diode Reverse Recovery Time 20 nS Qrr Diode Reverse Recovery Charge IF = 11.5A, diF/dt = 300 A/µs (Note 3) 19.7 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. |
Аналогичный номер детали - FDS6680S |
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Аналогичное описание - FDS6680S |
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