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FDS6685 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6685 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDS6685 Rev. B FDS6685 P-Channel Logic Level PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • Battery protection • Load switch • Motor drives March 1999 PRELIMINARY Features • -8.8 A, -30 V. R DS(ON) = 0.020 Ω @ VGS = -10 V R DS(ON) = 0.035 Ω @ VGS = -4.5 V • Extended V GSS range (±25V) for battery applications. • Low gate charge (19nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • High power and current handling capability. 1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±25 V ID Drain Current - Continuous (Note 1a) -8.8 A - Pulsed -50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6685 FDS6685 13’’ 12mm 2500 units 5 6 8 3 1 7 4 2 S D S S SO-8 D D D G |
Аналогичный номер детали - FDS6685 |
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Аналогичное описание - FDS6685 |
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