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FDS6814 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6814 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page FDS6814 Rev. A FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET 1999 Fairchild Semiconductor Corporation July 1999 ADVANCE INFORMATION Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current - Continuous (Note 1a) 8A - Pulsed 50 Power Dissipation for Dual Operation 2.0 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 PD (Note 1c) 0.9 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R θJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R θJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6814 FDS6814 13’’ 12mm 2500 units 1 5 7 8 2 3 4 6 D1 SO-8 D2 D2 D1 S1 S2 G1 G2 Features 8 A, 20 V. R DS(ON) = 0.020 Ω @ VGS = 4.5 V R DS(ON) = 0.030 Ω @ VGS = 2.5 V Rugged gate rating ( ±12V). Low gate charge. Fast switching speed. High performance trench technology for extremely low R DS(ON). High power and current handling capability. General Description These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide range of gate drive voltage. Applications Low voltage DC/DC Converters Load switch Battery protection Power management |
Аналогичный номер детали - FDS6814 |
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Аналогичное описание - FDS6814 |
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