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FDS6875 датащи(PDF) 4 Page - Fairchild Semiconductor

номер детали FDS6875
подробное описание детали  Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6875 датащи(HTML) 4 Page - Fairchild Semiconductor

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FDS6875 Rev.C
Typical Electrical Characteristics
(continued)
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0
5
10
15
20
25
0
1
2
3
4
5
Q
, GATE CHARGE (nC)
g
I = -6A
D
V
= -5V
DS
-10V
-15V
0.1
0.2
0.5
1
2
5
10
20
100
200
500
1000
2000
4000
- V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss
0.1
0.3
1
2
5
10
30
0.01
0.05
0.5
3
10
30
- V
, DRAIN-SOURCE VOLTAGE (V)
RDS(ON)
LIMIT
DC
DS
1s
100ms
10ms
1ms
10s
V
= -4.5V
SINGLE PULSE
R
= 135° C/W
T = 25° C
θJA
GS
A
100us
0.01
0.1
0.5
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
=135°C/W
T = 25°C
θJA
A
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R
(t) = r(t) * R
R
= 135°C/W
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2


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