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FDS6982 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6982 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page FDS6982, Rev. C FDS6982 Dual N-Channel, Notebook Power Supply MOSFET June 1999 Features • Q2: 8.6A, 30V. R DS(on) = 0.015 Ω @ V GS = 10V R DS(on) = 0.020 Ω @ V GS = 4.5V • Q1: 6.3A, 30V. R DS(on) = 0.028 Ω @ V GS = 10V R DS(on) = 0.035 Ω @ V GS = 4.5V • Fast switching speed. • Low gate charge (Q1 typical = 8.5nC). • High performance trench technology for extremely low R DS(ON). ©1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q2 Q1 Units VDSS Drain-Source Voltage 30 30 V VGSS Gate-Source Voltage ±20 ±20 V ID Drain Current - Continuous (Note 1a) 8.6 6.3 A - Pulsed 30 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6982 FDS6982 13” 12mm 2500 units D1 SO-8 D2 D2 D1 S1 S2 G1 G2 General Description This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchTM MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction (less than 20m Ω at V GS = 4.5V). Applications • Battery powered synchronous DC:DC converters. • Embedded DC:DC conversion. 1 5 7 8 2 3 4 6 Q1 Q2 |
Аналогичный номер детали - FDS6982 |
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Аналогичное описание - FDS6982 |
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