поискавой системы для электроныых деталей |
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FDS6984S датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6984S датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page FDS6680S Rev C (W) Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q2 Q1 3.0 1.3 A trr Reverse Recovery Time 17 ns Qrr Reverse Recovery Charge IF = 10A, diF/dt = 300 A/µs (Note 3) Q2 12.5 nC VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) Q2 Q1 0.5 0.74 0.7 1.2 V Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in 2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in 2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. See “SyncFET Schottky body diode characteristics” below. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDS6984S |
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Аналогичное описание - FDS6984S |
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