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FDS7760A датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS7760A датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page February 2000 PRELIMINARY 1999 Fairchild Semiconductor Corporation FDS7760A Rev. B (W) FDS7760A N-Channel Logic Level PowerTrench ® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Motor drives Features • 15 A, 30 V. R DS(ON) = 5.5 m Ω @ V GS = 10 V RDS(ON) = 8 m Ω @ V GS = 4.5 V. • Low gate charge (37nC typical) • Fast switching speed. • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability. S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 15 A – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 50 (10 sec) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS7760A FDS7760A 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS7760A |
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Аналогичное описание - FDS7760A |
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