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FDS8333C датащи(PDF) 7 Page - Fairchild Semiconductor |
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FDS8333C датащи(HTML) 7 Page - Fairchild Semiconductor |
7 / 8 page FDS8333C Rev C (W) Typical Characteristics: P-Channel (continued) 0 2 4 6 8 10 0 1 2 3 4 5 Q g, GATE CHARGE (nC) ID = -3.4A V DS = -5V -15V -10V 0 50 100 150 200 250 300 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS CRSS C OSS f = 1MHz V GS = 0 V Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µs R DS(ON) LIMIT VGS = -10V SINGLE PULSE RθJA = 135 oC/W T A = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE RθJA = 135°C/W TA = 25°C Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * R θJA RθJA = 135 o C/W TJ - T A = P * RθJA(t) Duty Cycle, D = t1 / t 2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Аналогичный номер детали - FDS8333C |
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Аналогичное описание - FDS8333C |
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