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FDS8333C датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8333C датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDS8333C Rev C (W) Electrical Characteristics T A = 25°C unl ess otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA Q1 Q2 30 –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA,Ref. to 25°C ID = –250 µA,Ref. to 25°C Q1 Q2 25 –22 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = –24 V, VGS = 0 V Q1 Q2 1 –1 µA IGSSF /IGSSR Gate–Body Leakage, Forward VGS = ± 16 V, VDS = 0 V ±100 nA IGSSF /IGSSR Gate–Body Leakage, Reverse VGS = ± 20V , VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Q1 VDS = VGS, ID = 250 µA 1 1.7 3 Gate Threshold Voltage Q2 VDS = VGS, ID = –250 µA –1 –1.8 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Ref. To 25°C Q1 ID = –250 µA,Ref. to 25°C Q2 –4.2 3.7 mV/ °C RDS(on) Q1 VGS = 10 V, ID = 4.1 A VGS = 4.5 V, ID = 3.2 A VGS = 10 V, ID = 4.1 A TJ=125 °C 67 81 103 80 130 145 Static Drain–Source On–Resistance Q2 VGS = –10 V, ID = –3.4 A VGS = – 4.5 V, ID = –2.5 A VGS = –10V,ID = –3.4A, TJ=125 °C 105 167 147 130 200 220 m Ω ID(on) Q1 VGS = 10 V, VDS = 5 V 10 On–State Drain Current Q2 VGS = –10 V, VDS = –5 V –5 A gFS Q1 VDS = 5 V ID = 4.1 A 9 Forward Transconductance Q2 VDS = –5 V ID = –3.4A 5 S Dynamic Characteristics Ciss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 282 Input Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 185 pF Coss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 49 Output Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 56 pF Crss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 20 Reverse Transfer Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 26 pF RG Q1 VGS= 15 mV, f=1.0MHz 2.3 Gate Resistance Q2 VGS=–15 mV, f=1.0MHz –9.6 Ω Switching Characteristics (Note 2) td(on) Q1 4.5 9 Turn–On Delay Time Q2 4.5 9 ns tr Q1 6 12 Turn–On Rise Time Q2 13 23 ns td(off) Q1 19 34 Turn–Off Delay Time Q2 11 20 ns tf Q1 1.5 3 Turn–Off Fall Time Q2 For Q1: VDS =10 V, IDS= 1 A VGS= 4.5 V, RGEN = 6 Ω For Q2: VDS =–10 V, IDS= –1 A VGS= –4.5 V, RGEN = 6 Ω 2 4 ns Qg Q1 4.7 6.6 Total Gate Charge Q2 4.1 5.7 nC Qgs Q1 0.9 Gate–Source Charge Q2 0.8 nC Qgd Q1 0.6 Gate–Drain Charge Q2 For Q1: VDS =10 V, IDS= 4.1 A VGS= 4.5 V, RGEN = 6 Ω For Q2: VDS =–10 V, I DS= –3.4 A VGS= –4.5 V, 0.4 nC |
Аналогичный номер детали - FDS8333C |
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Аналогичное описание - FDS8333C |
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