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FDS8333C датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS8333C
подробное описание детали  30V N & P-Channel PowerTrench MOSFETs
Download  8 Pages
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8333C датащи(HTML) 2 Page - Fairchild Semiconductor

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FDS8333C Rev C (W)
Electrical Characteristics
T
A = 25°C unl ess otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
VGS = 0 V, ID = –250
µA
Q1
Q2
30
–30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA,Ref. to 25°C
ID = –250
µA,Ref. to 25°C
Q1
Q2
25
–22
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V
Q1
Q2
1
–1
µA
IGSSF /IGSSR Gate–Body Leakage, Forward
VGS =
± 16 V, VDS = 0 V
±100
nA
IGSSF /IGSSR Gate–Body Leakage, Reverse
VGS =
± 20V , VDS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Q1
VDS = VGS, ID = 250
µA
1
1.7
3
Gate Threshold Voltage
Q2
VDS = VGS, ID = –250
µA
–1
–1.8
–3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA,Ref. To 25°C
Q1
ID = –250
µA,Ref. to 25°C
Q2
–4.2
3.7
mV/
°C
RDS(on)
Q1
VGS = 10 V,
ID = 4.1 A
VGS = 4.5 V, ID = 3.2 A
VGS = 10 V, ID = 4.1 A TJ=125
°C
67
81
103
80
130
145
Static Drain–Source
On–Resistance
Q2
VGS = –10 V, ID = –3.4 A
VGS = – 4.5 V, ID = –2.5 A
VGS = –10V,ID = –3.4A, TJ=125
°C
105
167
147
130
200
220
m
ID(on)
Q1
VGS = 10 V, VDS = 5 V
10
On–State Drain Current
Q2
VGS = –10 V, VDS = –5 V
–5
A
gFS
Q1
VDS = 5 V
ID = 4.1 A
9
Forward Transconductance
Q2
VDS = –5 V
ID = –3.4A
5
S
Dynamic Characteristics
Ciss
Q1
VDS=10 V, V GS= 0 V, f=1.0MHz
282
Input Capacitance
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
185
pF
Coss
Q1
VDS=10 V, V GS= 0 V, f=1.0MHz
49
Output Capacitance
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
56
pF
Crss
Q1
VDS=10 V, V GS= 0 V, f=1.0MHz
20
Reverse Transfer Capacitance
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
26
pF
RG
Q1
VGS= 15 mV, f=1.0MHz
2.3
Gate Resistance
Q2
VGS=–15 mV, f=1.0MHz
–9.6
Switching Characteristics
(Note 2)
td(on)
Q1
4.5
9
Turn–On Delay Time
Q2
4.5
9
ns
tr
Q1
6
12
Turn–On Rise Time
Q2
13
23
ns
td(off)
Q1
19
34
Turn–Off Delay Time
Q2
11
20
ns
tf
Q1
1.5
3
Turn–Off Fall Time
Q2
For Q1:
VDS =10 V,
IDS= 1 A
VGS= 4.5 V,
RGEN = 6
For Q2:
VDS =–10 V, IDS= –1 A
VGS= –4.5 V, RGEN = 6
2
4
ns
Qg
Q1
4.7
6.6
Total Gate Charge
Q2
4.1
5.7
nC
Qgs
Q1
0.9
Gate–Source Charge
Q2
0.8
nC
Qgd
Q1
0.6
Gate–Drain Charge
Q2
For Q1:
VDS =10 V,
IDS= 4.1 A
VGS= 4.5 V,
RGEN = 6
For Q2:
VDS =–10 V,
I DS= –3.4 A
VGS= –4.5 V,
0.4
nC


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