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FDS8926A датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8926A датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Absolute Maximum Ratings T A = 25 oC unless other wise noted Symbol Parameter FDS8926A Units V DSS Drain-Source Voltage 30 V V GSS Gate-Source Voltage ±8 V I D Drain Current - Continuous (Note 1a) 5.5 A - Pulsed 20 P D Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T J,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W FDS8926A Rev.B 5.5 A, 30 V. R DS(ON) = 0.030 Ω @ VGS = 4.5 V R DS(ON) = 0.038 Ω @ VGS = 2.5 V. High density cell design for extremely low R DS(ON). Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V. High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOT TM-8 SOIC-16 SO-8 SOT-223 SuperSOT TM-6 SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. S1 D1 S2 G1 SO-8 D2 D2 D1 G2 FDS 8926A pin 1 1 5 7 8 2 3 4 6 © 1998 Fairchild Semiconductor Corporation |
Аналогичный номер детали - FDS8926A |
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Аналогичное описание - FDS8926A |
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