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FDS8936S датащи(PDF) 1 Page - Fairchild Semiconductor

номер детали FDS8936S
подробное описание детали  Dual N-Channel Enhancement Mode Field Effect Transistor
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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August 1997
FDS8936S
Dual N-Channel Enhancement Mode Field Effect Transistor
GeneralDescription
Features
Absolute Maximum Ratings
T
A = 25
oC unless other wise noted
Symbol
Parameter
FDS8936S
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
5
A
- Pulsed
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS8936S Rev.C
Low gate charge.
5.0 A, 30 V. R
DS(ON) = 0.040 @ VGS = 10 V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM-6
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to provide superior switching performance
and
minimize
on-state
resistance.
These
devices
are
particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
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7
8
2
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© 1997 Fairchild Semiconductor Corporation


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