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FDS9412 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS9412 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page April 2000 2000 Fairchild Semiconductor Corporation FDS9412 Rev D(W) FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed. Features • 7.9 A, 30 V. RDS(ON) = 22 m Ω @ V GS = 10 V RDS(ON) = 36 m Ω @ V GS = 4.5 V • Very low gate charge. • High switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package. S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 7.9 A – Pulsed 24 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9412 FDS9412 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS9412 |
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Аналогичное описание - FDS9412 |
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