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FDS9945 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS9945 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page February 2001 ©2001 Fairchild Semiconductor Corporation FDS9945 Rev B(W) FDS9945 60V N-Channel PowerTrench® MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 3.5 A, 60 V. RDS(ON) = 0.100Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5V • Optimized for use in switching DC/DC converters with PWM controllers • Very fast switching • Low gate charge. S D S S SO-8 D D D G D2 D2 D1 D1 S2 G2 S1 G1 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 3.5 A – Pulsed 10 Power Dissipation for Single Operation (Note 1a) 2 (Note 1b) 1.6 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 (steady state), 50 (10 sec) °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 135 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9945 FDS9945 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS9945 |
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Аналогичное описание - FDS9945 |
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