поискавой системы для электроныых деталей |
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STD18N65M5 датащи(PDF) 3 Page - STMicroelectronics |
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STD18N65M5 датащи(HTML) 3 Page - STMicroelectronics |
3 / 18 page STB18N65M5, STD18N65M5 Electrical ratings Doc ID 023446 Rev 1 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit D2PAK DPAK VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 15 A ID Drain current (continuous) at TC = 100 °C 9.4 A IDM (1) Drain current (pulsed) 60 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt (1) 1. ISD ≤ 15 A, di/dt ≤400 A/µs; VDSPeak < V(BR)DSS, VDD = 400 V Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit D2PAK DPAK Rthj-case Thermal resistance junction-case max 1.14 °C/W Rthj-pcb (1) 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Thermal resistance junction-pcb max 30 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) 4A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID= IAR; VDD=50 V) 210 mJ |
Аналогичный номер детали - STD18N65M5 |
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Аналогичное описание - STD18N65M5 |
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