STU12N65M5 datasheet(5/23 Pages) STMICROELECTRONICS

номер детали	STU12N65M5

подробное описание детали	N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

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STD/F/I/P/U12N65M5

Electrical characteristics

Doc ID 15428 Rev 5

5/23

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 5 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 21 and

Figure 24)

-

22.6

17.6

15.6

23.4

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

8.5

34

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 8.5 A, VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8.5 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 24)

230

2.2

19

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8.5 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see

Figure 24)

280

2.7

19

ns

µC

A

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