FM22LD16-55-BG datasheet(8/15 Pages) CYPRESS

номер детали	FM22LD16-55-BG

подробное описание детали	4Mbit F-RAM Memory

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производитель	CYPRESS [Cypress Semiconductor]

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FM22LD16 - 256Kx16 FRAM

Document Number: 001-86190 Rev. **

Page 8 of 15

Electrical Specifications

Absolute Maximum Ratings

Symbol

Description

Ratings

VDD

Power Supply Voltage with respect to VSS

-1.0V to +4.5V

VIN

Voltage on any signal pin with respect to VSS

-1.0V to +4.5V and

VIN < VDD+1V

TSTG

Storage Temperature

-55C to +125C

TLEAD

Lead Temperature (Soldering, 10 seconds)

260 C

VESD

Electrostatic Discharge Voltage

- Human Body Model (JEDEC Std JESD22-A114-D)

- Charged Device Model (JEDEC Std JESD22-C101-C)

- Machine Model (JEDEC Std JESD22-A115-A)

2.5kV

1.5kV

150V

Package Moisture Sensitivity Level

MSL-3

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this

specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

DC Operating Conditions (TA = -40 C to + 85 C, VDD = 2.7V to 3.6V unless otherwise specified)

Symbol

Parameter

Min

Typ

Max

Units

Notes

VDD

Power Supply

2.7

3.3

3.6

V

IDD

Power Supply Current

8

12

mA

1

ISB

Standby Current

@ TA = 25°C

@ TA = 85°C

90

-

150

270

A

2

ILI

Input Leakage Current

1

A

3

ILO

Output Leakage Current

1

A

3

VIH

Input High Voltage

2.2

VDD + 0.3

V

VIL

Input Low Voltage

-0.3

0.6

V

VOH1

Output High Voltage (IOH = -1.0 mA)

2.4

V

VOH2

Output High Voltage (IOH = -100 A)

VDD-0.2

V

VOL1

Output Low Voltage (IOL = 2.1 mA)

0.4

V

VOL2

Output Low Voltage (IOL = 100 A)

0.2

V

Notes

1.

VDD = 3.6V, /CE cycling at min. cycle time. All inputs toggling at CMOS levels (0.2V or VDD-0.2V), all DQ pins unloaded.

2.

VDD = 3.6V, /CE at VDD, All other pins are static and at CMOS levels (0.2V or VDD-0.2V).

3.

VIN, VOUT between VDD and VSS.

Аналогичный номер детали - FM22LD16-55-BG

производитель	номер детали	датащи	подробное описание детали
Ramtron International C...	FM22LD16-55-BG	211Kb / 14P	4Mbit F-RAM Memory
Cypress Semiconductor	FM22LD16-55-BG	434Kb / 14P	4Mbit F-RAM Memory
Cypress Semiconductor	FM22LD16-55-BGTR	434Kb / 14P	4Mbit F-RAM Memory

More results

Аналогичное описание - FM22LD16-55-BG

производитель	номер детали	датащи	подробное описание детали
Cypress Semiconductor	FM22LD16	434Kb / 14P	4Mbit F-RAM Memory
Ramtron International C...	FM22LD16	215Kb / 14P	4Mbit F-RAM Memory
Ramtron International C...	FM22LD16	211Kb / 14P	4Mbit F-RAM Memory
Cypress Semiconductor	FM22L16	403Kb / 14P	4Mbit Asynchronous F-RAM Memory
Ramtron International C...	FM21LD16	217Kb / 14P	2Mbit F-RAM Memory
Cypress Semiconductor	FM21LD16	438Kb / 15P	2Mbit F-RAM Memory
Ramtron International C...	FM21LD16	277Kb / 15P	2Mbit F-RAM Memory
Ramtron International C...	FM22L16	189Kb / 15P	4Mbit FRAM Memory
Sharp Corporation	LHF04C10	3Mb / 48P	4Mbit Flash Memory
Ramtron International C...	FM21L16	292Kb / 15P	2Mbit F-RAM Memory

More results

FM22LD16-55-BG датащи(PDF) 8 Page - Cypress Semiconductor

FM22LD16-55-BG датащи(HTML) 8 Page - Cypress Semiconductor

Аналогичный номер детали - FM22LD16-55-BG

Аналогичное описание - FM22LD16-55-BG

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