FQD13N10 datasheet(3/9 Pages) FAIRCHILD

номер детали	FQD13N10

подробное описание детали	100V N-Channel MOSFET

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производитель	FAIRCHILD [Fairchild Semiconductor]

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Rev. A1, January 2001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

10

-1

10

0

10

1

150℃

※ Notes :

1. V

GS = 0V

2. 250μs Pulse Test

25℃

V

SD, Source-Drain voltage [V]

246

8

10

-1

10

0

10

1

※ Notes :

1. V

DS

= 40V

2. 250μs Pulse Test

-55℃

150℃

25℃

V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom :

4.5 V

※ Notes :

1. 250μs Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

0

102030

40

0.0

0.2

0.4

0.6

0.8

V

GS = 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

024

68

10

12

0

2

4

6

8

10

12

V

DS = 50V

V

DS = 80V

※ Note : I

D = 12.8A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

150

300

450

600

750

900

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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