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IRF5801TRPBF датащи(PDF) 1 Page - International Rectifier |
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IRF5801TRPBF датащи(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 04/20/10 IRF5801PbF SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free l Halogen-Free VDSS RDS(on) max ID 200V 2.2 W 0.6A Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 0.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.48 A IDM Pulsed Drain Current 4.8 PD @TA = 25°C Power Dissipation 2.0 W Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 9.6 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 TSOP-6 Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient ––– 62.5 °C/W Thermal Resistance " ! B 9 9 T 9 # $ % 9 PD-95474B |
Аналогичный номер детали - IRF5801TRPBF |
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Аналогичное описание - IRF5801TRPBF |
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