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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FQP20N06L датащи(PDF) 2 Page - Fairchild Semiconductor |
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FQP20N06L датащи(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Rev. A1. May 2001 ©2001 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 450 µH, I AS = 21A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 21A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 10.5 A VGS = 5 V, ID =10.5 A -- -- 0.042 0.055 0.055 0.07 Ω gFS Forward Transconductance VDS = 25 V, ID = 10.5 A -- 11 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 480 630 pF Coss Output Capacitance -- 175 230 pF Crss Reverse Transfer Capacitance -- 35 45 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 10.5 A, RG = 25 Ω -- 10 30 ns tr Turn-On Rise Time -- 165 340 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 70 150 ns Qg Total Gate Charge VDS = 48 V, ID = 21 A, VGS = 5 V -- 9.5 13 nC Qgs Gate-Source Charge -- 2.5 -- nC Qgd Gate-Drain Charge -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 21 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 84 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 21 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 21 A, dIF / dt = 100 A/µs -- 54 -- ns Qrr Reverse Recovery Charge -- 75 -- nC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) |
Аналогичный номер детали - FQP20N06L |
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Аналогичное описание - FQP20N06L |
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