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FDS89161LZ датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS89161LZ датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page June 2011 ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS89161LZ Rev. C4 FDS89161LZ Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 m Ω Features Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package CDM ESD protection level > 2KV typical (Note 4) 100% UIL Tested RoHS Compliant General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level . Application DC-DC conversion MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 2.7 A -Pulsed 15 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation TC = 25 °C 31 W Power Dissipation TA = 25 °C (Note1a) 1.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 4.0 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity FDS89161LZ FDS89161LZ SO-8 13 ’’ 12 mm 2500 units G2 S1 G1 S2 D2 D2 D1 D1 Pin 1 SO-8 D1 D1 D2 D2 S2 S1 G1 G2 4 3 2 1 5 6 7 8 Q2 Q1 |
Аналогичный номер детали - FDS89161LZ |
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Аналогичное описание - FDS89161LZ |
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