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FDS89161LZ датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS89161LZ
подробное описание детали  Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS89161LZ датащи(HTML) 2 Page - Fairchild Semiconductor

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©2011 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FDS89161LZ Rev. C4
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
68
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±10
μA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA1
1.7
2.2
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 2.7 A
81
105
m
Ω
VGS = 4.5 V, ID = 2.1 A
110
160
VGS = 10 V, ID = 2.7 A, TJ = 125 °C
140
182
gFS
Forward Transconductance
VDS = 10 V, ID = 2.7 A
7.8
S
Ciss
Input Capacitance
VDS = 50 V, VGS = 0 V,
f = 1MHz
227
302
pF
Coss
Output Capacitance
44
58
pF
Crss
Reverse Transfer Capacitance
3
4
pF
Rg
Gate Resistance
0.9
Ω
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 2.7 A,
VGS = 10 V, RGEN = 6 Ω
3.8
10
ns
tr
Rise Time
1.2
10
ns
td(off)
Turn-Off Delay Time
9.5
17
ns
tf
Fall Time
1.6
10
ns
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
VDD = 50 V,
ID = 2.7 A
3.8
5.3
nC
Qg(TOT)
Total Gate Charge
VGS = 0 V to 5 V
2.1
2.9
nC
Qgs
Gate to Source Charge
0.7
nC
Qgd
Gate to Drain “Miller” Charge
0.7
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.7 A
(Note 2)
0.8
1.3
V
VGS = 0 V, IS = 2 A
(Note 2)
0.8
1.2
trr
Reverse Recovery Time
IF = 2.7 A, di/dt = 100 A/μs
31
56
ns
Qrr
Reverse Recovery Charge
20
36
nC
b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper
NOTES:
1. RθJA is determined with the device mounted on a 1in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.


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