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FDS89161LZ датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS89161LZ датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS89161LZ Rev. C4 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C 68 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA1 1.7 2.2 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.7 A 81 105 m Ω VGS = 4.5 V, ID = 2.1 A 110 160 VGS = 10 V, ID = 2.7 A, TJ = 125 °C 140 182 gFS Forward Transconductance VDS = 10 V, ID = 2.7 A 7.8 S Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1MHz 227 302 pF Coss Output Capacitance 44 58 pF Crss Reverse Transfer Capacitance 3 4 pF Rg Gate Resistance 0.9 Ω td(on) Turn-On Delay Time VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω 3.8 10 ns tr Rise Time 1.2 10 ns td(off) Turn-Off Delay Time 9.5 17 ns tf Fall Time 1.6 10 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 50 V, ID = 2.7 A 3.8 5.3 nC Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 2.1 2.9 nC Qgs Gate to Source Charge 0.7 nC Qgd Gate to Drain “Miller” Charge 0.7 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.8 1.3 V VGS = 0 V, IS = 2 A (Note 2) 0.8 1.2 trr Reverse Recovery Time IF = 2.7 A, di/dt = 100 A/μs 31 56 ns Qrr Reverse Recovery Charge 20 36 nC b) 135°C/W when mounted on a minimun pad a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper NOTES: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. |
Аналогичный номер детали - FDS89161LZ |
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Аналогичное описание - FDS89161LZ |
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