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FDS6911 датащи(PDF) 1 Page - List of Unclassifed Manufacturers |
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FDS6911 датащи(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 6 page March 2006 ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FDS6911 Rev A(W) FDS6911 Dual N-Channel Logic Level PowerTrench ® MOSFET 20V, 7.5A, 13m Ω General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 7.5 A – Pulsed 20 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 PD (Note 1c) 0.9 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6911 FDS6911 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS6911 |
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Аналогичное описание - FDS6911 |
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