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FDS6911 датащи(PDF) 1 Page - List of Unclassifed Manufacturers

номер детали FDS6911
подробное описание детали  Fast switching speed, Low gate charge
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March 2006
©2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDS6911 Rev A(W)
FDS6911
Dual N-Channel Logic Level PowerTrench
® MOSFET
20V, 7.5A, 13m
Ω
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
rDS(on) = 13 mΩ @ VGS = 10 V
rDS(on) = 17 mΩ @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
– Continuous
(Note 1a)
7.5
A
– Pulsed
20
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
PD
(Note 1c)
0.9
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6911
FDS6911
13’’
12mm
2500 units


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