поискавой системы для электроныых деталей |
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IRF7307TRPBF датащи(PDF) 1 Page - International Rectifier |
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IRF7307TRPBF датащи(HTML) 1 Page - International Rectifier |
1 / 10 page IRF7307PbF HEXFET® Power MOSFET PD - 95179 10/7/04 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of powerapplications. Withtheseimprovements,multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 SO-8 Description N-Ch P-Ch VDSS 20V -20V RDS(on) 0.050Ω 0.090Ω Max. N-Channel P-Channel ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V 5.7-4.7 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2 -4.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.1 -3.4 IDM Pulsed Drain Current 21 -17 PD @TA = 25°C Power Dissipation 2.0 W Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Units A Absolute Maximum Ratings Thermal Resistance Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W l Lead-Free |
Аналогичный номер детали - IRF7307TRPBF |
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