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IRF7307TRPBF датащи(PDF) 1 Page - International Rectifier

номер детали IRF7307TRPBF
подробное описание детали  HEXFET짰 Power MOSFET
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7307TRPBF датащи(HTML) 1 Page - International Rectifier

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IRF7307PbF
HEXFET® Power MOSFET
PD - 95179
10/7/04
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
Description
N-Ch
P-Ch
VDSS
20V
-20V
RDS(on) 0.050Ω 0.090Ω
Max.
N-Channel
P-Channel
ID @ TA = 25°C
10 Sec. Pulse Drain Current, VGS @ 4.5V
5.7-4.7
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
5.2
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
4.1
-3.4
IDM
Pulsed Drain Current 
21
-17
PD @TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Units
A
Absolute Maximum Ratings
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient„
–––
62.5
°C/W
l
Lead-Free


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