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STI4N62K3 датащи(PDF) 4 Page - STMicroelectronics

номер детали STI4N62K3
подробное описание детали  N-channel 620 V, 1.7typ., 3.8 A SuperMESH3 Power MOSFET
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Electrical characteristics
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
4/19
Doc ID 17548 Rev 4
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
620
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 620 V
VDS = 620V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 1.9 A
1.7
2
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
550
42
7
pF
pF
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VDS = 0 to 496 V, VGS = 0
27
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
2
5
10
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 496 V, ID = 3.8 A,
VGS = 10 V
(see
Figure 20)
22
4
13
nC
nC
nC


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