поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

STD4N62K3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STD4N62K3
подробное описание детали  N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD4N62K3 датащи(HTML) 5 Page - STMicroelectronics

  STD4N62K3 Datasheet HTML 1Page - STMicroelectronics STD4N62K3 Datasheet HTML 2Page - STMicroelectronics STD4N62K3 Datasheet HTML 3Page - STMicroelectronics STD4N62K3 Datasheet HTML 4Page - STMicroelectronics STD4N62K3 Datasheet HTML 5Page - STMicroelectronics STD4N62K3 Datasheet HTML 6Page - STMicroelectronics STD4N62K3 Datasheet HTML 7Page - STMicroelectronics STD4N62K3 Datasheet HTML 8Page - STMicroelectronics STD4N62K3 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 18 page
background image
STB4N62K3, STD4N62K3
Electrical characteristics
Doc ID 18337 Rev 2
5/18
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
3.8
15.2
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 3.8 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3.8 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 22)
-
220
1.4
13
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3.8 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
270
1.9
14
ns
µC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
-
V


Аналогичный номер детали - STD4N62K3

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
STD4N20 STMICROELECTRONICS-STD4N20 Datasheet
271Kb / 9P
   N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET
STD4N25 STMICROELECTRONICS-STD4N25 Datasheet
142Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STD4N52K3 STMICROELECTRONICS-STD4N52K3 Datasheet
1Mb / 21P
   N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STD4N52K3 STMICROELECTRONICS-STD4N52K3 Datasheet
1Mb / 2P
   N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
February 2013 Rev 2
logo
VBsemi Electronics Co.,...
STD4N52K3 VBSEMI-STD4N52K3 Datasheet
1Mb / 9P
   Power MOSFET
More results

Аналогичное описание - STD4N62K3

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
STF4N62K3 STMICROELECTRONICS-STF4N62K3 Datasheet
1Mb / 19P
   N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET
STF10N62K3 STMICROELECTRONICS-STF10N62K3 Datasheet
954Kb / 17P
   N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?
STU2N62K3 STMICROELECTRONICS-STU2N62K3 Datasheet
1Mb / 25P
   N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET
STB5N62K3 STMICROELECTRONICS-STB5N62K3 Datasheet
1Mb / 19P
   N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET
STF3LN62K3 STMICROELECTRONICS-STF3LN62K3 Datasheet
1Mb / 21P
   N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK
February 2011 Rev 1
STD6N62K3 STMICROELECTRONICS-STD6N62K3 Datasheet
433Kb / 17P
   N-channel 620 V, 1.1 廓, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3??Power MOSFET
logo
List of Unclassifed Man...
STW17N62K3 ETC2-STW17N62K3 Datasheet
976Kb / 17P
   N-channel 620 V, 0.28 廓, 15.5 A, TO-220FP, TO-220, TO-247 SuperMESH3??Power MOSFET
logo
STMicroelectronics
STB3N62K3 STMICROELECTRONICS-STB3N62K3 Datasheet
567Kb / 19P
   N-channel 620 V, 2.2 廓 , 2.7 A SuperMESH3??Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
logo
STATEK CORPORATION
STD3LN62K3 STATEK-STD3LN62K3 Datasheet
1Mb / 21P
   N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFE DPAK, TO-220FP, TO-220, IPAK
logo
STMicroelectronics
STF6N62K3 STMICROELECTRONICS-STF6N62K3 Datasheet
1Mb / 19P
   N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com