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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BAS321 датащи(PDF) 3 Page - NXP Semiconductors |
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BAS321 датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 9 page  2004 Jan 26 3 NXP Semiconductors Product data sheet General purpose diode BAS321 CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Soldering point of cathode tab. 2. Device mounted on an FR4 printed circuit board. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V IR reverse current see Fig.5 VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-s) thermal resistance from junction to soldering point Ts = 90°C; note 1 130 K/W Rth(j-a) thermal resistance from junction to ambient note 2 366 K/W |
Аналогичный номер детали - BAS321 |
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Аналогичное описание - BAS321 |
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