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STD9NM60N датащи(PDF) 1 Page - STMicroelectronics |
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STD9NM60N датащи(HTML) 1 Page - STMicroelectronics |
1 / 16 page October 2010 Doc ID 18063 Rev 1 1/16 16 STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDSS (@Tjmax) RDS(on) max. ID STD9NM60N 650 V < 0.745 Ω 6.5 A STF9NM60N STP9NM60N 1 2 3 1 2 3 TO-220FP TO-220 DPAK 1 3 Table 1. Device summary Order codes Marking Packages Packaging STD9NM60N 9NM60N DPAK Tape and reel STF9NM60N TO-220FP Tube STP9NM60N TO-220 www.st.com |
Аналогичный номер детали - STD9NM60N |
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Аналогичное описание - STD9NM60N |
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