поискавой системы для электроныых деталей |
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TPS3780DDRYT датащи(PDF) 2 Page - Texas Instruments |
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TPS3780DDRYT датащи(HTML) 2 Page - Texas Instruments |
2 / 17 page TPS3779 TPS3780 SBVS216B – SEPTEMBER 2012 – REVISED MAY 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. DEVICE INFORMATION PRODUCT HYSTERESIS (%) OUTPUT TPS3779A 0.5 Push-pull TPS3779B 5 Push-pull TPS3779C 10 Push-pull TPS3779D 1 Push-pull TPS3780A 0.5 Open-drain TPS3780B 5 Open-drain TPS3780C 10 Open-drain TPS3780D 1 Open-drain ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range, unless otherwise noted. VALUE UNIT VCC –0.3 to +7 V Voltage(2) OUT1, OUT2 –0.3 to +7 V SENSE1, SENSE2 –0.3 to +7 V Current OUT pin ±20 mA Operating junction, TJ –40 to +125 °C Temperature(3) Storage, Tstg –65 to +150 °C Human body model (HBM) 2 kV Electrostatic discharge (ESD) ratings Charge device model (CDM) 500 V (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute maximum- rated conditions for extended periods my affect device reliability. (2) All voltages are with respect to the network ground terminal. (3) As a result of the low dissipated power in this device, it is assumed that TJ = TA. THERMAL INFORMATION TPS3779 TPS3780 THERMAL METRIC(1) UNITS DRY (µSON) 6 PINS θJA Junction-to-ambient thermal resistance 306.7 θJCtop Junction-to-case (top) thermal resistance 174.1 θJB Junction-to-board thermal resistance 173.4 °C/W ψJT Junction-to-top characterization parameter 30.9 ψJB Junction-to-board characterization parameter 171.6 θJCbot Junction-to-case (bottom) thermal resistance 65.2 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 2 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: TPS3779 TPS3780 |
Аналогичный номер детали - TPS3780DDRYT |
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Аналогичное описание - TPS3780DDRYT |
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