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IRF9389PBF датащи(PDF) 2 Page - International Rectifier |
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IRF9389PBF датащи(HTML) 2 Page - International Rectifier |
2 / 14 page www.irf.com © 2012 International Rectifier January 14, 2013 2 IRF9389PbF Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 16) Pulse width 400μs; duty cycle 2%. Surface mounted on 1 in square Cu board R is measured at TJ approximately 90°C Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage N-Ch 30 ––– ––– V P-Ch -30 ––– ––– VDSS/ TJ Breakdown Voltage Temp. Coefficient N-Ch ––– 0.03 ––– V/°C P-Ch ––– 0.02 ––– N-Ch ––– 22 27 m RDS(on) Static Drain-to-Source On-Resistance ––– 33 40 P-Ch ––– 51 64 m ––– 82 103 VGS(th) Gate Threshold Voltage N-Ch 1.3 1.8 2.3 V VDS = VGS, ID = 10μA P-Ch -1.3 -1.8 -2.3 VDS = VGS, ID = -10μA N-Ch ––– ––– 1.0 μA IDSS Drain-to-Source Leakage Current P-Ch ––– ––– -1.0 N-Ch ––– ––– 150 P-Ch ––– ––– -150 IGSS Gate-to-Source Forward Leakage N-Ch ––– ––– 100 nA P-Ch ––– ––– -100 Gate-to-Source Reverse Leakage N-Ch ––– ––– -100 P-Ch ––– ––– 100 gfs Forward Transconductance N-Ch 8.2 ––– ––– S P-Ch 4.1 ––– ––– Qg Total Gate Charge N-Ch ––– 6.8 14 nC P-Ch ––– 8.1 16 Qgs Gate-to-Source Charge N-Ch ––– 1.4 ––– P-Ch ––– 1.3 ––– Qgd Gate-to-Drain ("Miller") Charge N-Ch ––– 0.98 ––– P-Ch ––– 2.1 ––– RG Gate Resistance N-Ch ––– 2.2 4.4 P-Ch ––– 9.4 19 td(on) Turn-On Delay Time N-Ch ––– 5.1 ––– ns P-Ch ––– 8.0 ––– tr Rise Time N-Ch ––– 4.8 ––– P-Ch ––– 14 ––– td(off) Turn-Off Delay Time N-Ch ––– 4.9 ––– P-Ch ––– 17 ––– tf Fall Time N-Ch ––– 3.9 ––– P-Ch ––– 15 ––– Ciss Input Capacitance N-Ch ––– 398 ––– pF P-Ch ––– 383 ––– Coss Output Capacitance N-Ch ––– 82 ––– P-Ch ––– 104 ––– Crss Reverse Transfer Capacitance N-Ch ––– 36 ––– P-Ch ––– 64 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body DiodeN-Ch ––– ––– 2.0 A P-Ch ––– ––– -2.0 ISM Pulsed Source Current (Body Diode) N-Ch ––– ––– 34 P-Ch ––– ––– -23 VSD Diode Forward Voltage N-Ch ––– ––– 1.2 V P-Ch ––– ––– -1.2 trr Reverse Recovery Time N-Ch ––– 8.4 13 ns P-Ch ––– 11 17 Qrr Reverse Recovery Charge N-Ch ––– 2.3 3.5 nC P-Ch ––– 4.8 7.2 VGS = -10V, VDS = -15V, ID = -4.6A N-Channel ID = 1.0A, RG = 6.2 VGS = 20V N-Channel P-Channel N-Channel VGS = -20V VGS = 20V VGS = -20V VDS = 15V, ID = 5.4A VDS = 24V, VGS = 0V, TJ = 125°C VGS = -4.5V, ID = -3.7A d VDS = 24V, VGS = 0V P-Channel VDD = 15V, VGS = 4.5V d VDD = -15V, VGS = -4.5V d VGS = 0V, VDS = 15V, ƒ = 1.0MHz VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VDS = -15V, ID = -3.7A Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 6.8A d VGS = 4.5V, ID = 5.4A d Conditions VGS = 10V, VDS = 15V, ID = 6.8A VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -10V, ID = -4.6A d VGS = 0V, VDS = -15V, ƒ = 1.0KHz N-Channel: TJ = 25°C, IF = 2.0A, TJ = 25°C, IS = 2.0A, VGS = 0V d VDD = -15V, di/dt = 102/μs d TJ = 25°C, IS = -2.0A, VGS = 0V d VDD = 15V, di/dt = 102/μs d ID = -1.0A, RG = 6.8 P-Channel P-Channel: TJ = 25°C, IF = -2.0A, |
Аналогичный номер детали - IRF9389PBF |
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Аналогичное описание - IRF9389PBF |
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