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IRF9389PBF датащи(PDF) 2 Page - International Rectifier

номер детали IRF9389PBF
подробное описание детали  High and Low Side Switches for Inverter
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF9389PBF датащи(HTML) 2 Page - International Rectifier

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www.irf.com © 2012 International Rectifier
January 14, 2013
2
IRF9389PbF
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 16)
‚ Pulse width 400μs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board
„ Ris measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
N-Ch
30
–––
–––
V
P-Ch
-30
–––
–––
VDSS/ TJ Breakdown Voltage Temp. Coefficient
N-Ch
–––
0.03
–––
V/°C
P-Ch
–––
0.02
–––
N-Ch
–––
22
27
m
RDS(on)
Static Drain-to-Source On-Resistance
–––
33
40
P-Ch
–––
51
64
m
–––
82
103
VGS(th)
Gate Threshold Voltage
N-Ch
1.3
1.8
2.3
V
VDS = VGS, ID = 10μA
P-Ch
-1.3
-1.8
-2.3
VDS = VGS, ID = -10μA
N-Ch
–––
–––
1.0
μA
IDSS
Drain-to-Source Leakage Current
P-Ch
–––
–––
-1.0
N-Ch
–––
–––
150
P-Ch
–––
–––
-150
IGSS
Gate-to-Source Forward Leakage
N-Ch
–––
–––
100
nA
P-Ch
–––
–––
-100
Gate-to-Source Reverse Leakage
N-Ch
–––
–––
-100
P-Ch
–––
–––
100
gfs
Forward Transconductance
N-Ch
8.2
–––
–––
S
P-Ch
4.1
–––
–––
Qg
Total Gate Charge
N-Ch
–––
6.8
14
nC
P-Ch
–––
8.1
16
Qgs
Gate-to-Source Charge
N-Ch
–––
1.4
–––
P-Ch
–––
1.3
–––
Qgd
Gate-to-Drain ("Miller") Charge
N-Ch
–––
0.98
–––
P-Ch
–––
2.1
–––
RG
Gate Resistance
N-Ch
–––
2.2
4.4
P-Ch
–––
9.4
19
td(on)
Turn-On Delay Time
N-Ch
–––
5.1
–––
ns
P-Ch
–––
8.0
–––
tr
Rise Time
N-Ch
–––
4.8
–––
P-Ch
–––
14
–––
td(off)
Turn-Off Delay Time
N-Ch
–––
4.9
–––
P-Ch
–––
17
–––
tf
Fall Time
N-Ch
–––
3.9
–––
P-Ch
–––
15
–––
Ciss
Input Capacitance
N-Ch
–––
398
–––
pF
P-Ch
–––
383
–––
Coss
Output Capacitance
N-Ch
–––
82
–––
P-Ch
–––
104
–––
Crss
Reverse Transfer Capacitance
N-Ch
–––
36
–––
P-Ch
–––
64
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current (Body DiodeN-Ch
–––
–––
2.0
A
P-Ch
–––
–––
-2.0
ISM
Pulsed Source Current (Body Diode)
N-Ch
–––
–––
34
P-Ch
–––
–––
-23
VSD
Diode Forward Voltage
N-Ch
–––
–––
1.2
V
P-Ch
–––
–––
-1.2
trr
Reverse Recovery Time
N-Ch
–––
8.4
13
ns
P-Ch
–––
11
17
Qrr
Reverse Recovery Charge
N-Ch
–––
2.3
3.5
nC
P-Ch
–––
4.8
7.2
VGS = -10V, VDS = -15V, ID = -4.6A
N-Channel
ID = 1.0A, RG = 6.2
VGS = 20V
N-Channel
P-Channel
N-Channel
VGS = -20V
VGS = 20V
VGS = -20V
VDS = 15V, ID = 5.4A
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -4.5V, ID = -3.7A
d
VDS = 24V, VGS = 0V
P-Channel
VDD = 15V, VGS = 4.5V
d
VDD = -15V, VGS = -4.5V
d
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VDS = -15V, ID = -3.7A
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 6.8A
d
VGS = 4.5V, ID = 5.4A
d
Conditions
VGS = 10V, VDS = 15V, ID = 6.8A
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -4.6A
d
VGS = 0V, VDS = -15V, ƒ = 1.0KHz
N-Channel: TJ = 25°C, IF = 2.0A,
TJ = 25°C, IS = 2.0A, VGS = 0V d
VDD = -15V, di/dt = 102/μs
d
TJ = 25°C, IS = -2.0A, VGS = 0V d
VDD = 15V, di/dt = 102/μs
d
ID = -1.0A, RG = 6.8
P-Channel
P-Channel: TJ = 25°C, IF = -2.0A,


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