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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BC559BTA датащи(PDF) 1 Page - Fairchild Semiconductor |
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BC559BTA датащи(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556/557/558/559/560 Rev. B0 1 October 2012 BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 Absolute Maximum Ratings T a = 25°C unless otherwise noted Electrical Characteristics T a = 25C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 : BC557/560 : BC558/559 -80 -50 -30 V V V VCEO Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 -65 -45 -30 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE(sat) Collector-Emitter Saturation Volt- age IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -90 -250 -300 -650 mV mV VBE(sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -700 -900 mV mV VBE(on) Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA -600 -660 -750 -800 mV mV fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF NF Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 VCE= -5V, IC= -200A f=1KHz, RG=2K VCE= -5V, IC= -200A RG=2Kf=30~15000MHz 2 1 1.2 1.2 10 4 4 2 dB dB dB dB Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 1. Collector 2. Base 3. Emitter TO-92 1 |
Аналогичный номер детали - BC559BTA |
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Аналогичное описание - BC559BTA |
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