поискавой системы для электроныых деталей |
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FDS9958F085 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS9958F085 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page www.fairchildsemi.com 4 ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A Figure 7. 0 5 10 15 20 0 2 4 6 8 10 ID = -2.9A VDD = -40V VDD = -20V Qg, GATE CHARGE(nC) VDD = -30V Gate Charge Characteristics Figure8. 0.1 1 10 10 100 1000 f = 1MHz VGS = 0V -VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 60 2000 CapacitancevsDrain to Source Voltage Figure9. 0.01 0.1 1 10 100 1 2 3 4 TJ = 25oC TJ = 125oC tAV, TIME IN AVALANCHE(ms) Unclamped Inductive Switching Capability Figure10. 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 RθJA = 78 oC/W VGS = -4.5V VGS = -10V TA, AMBIENT TEMPERATURE ( oC) MaximumContinuousDrain Current vs Ambient Temperature Figure 11. Forward Bias Safe Operating Area 0.1 1 10 100 0.01 0.1 1 10 1ms DC 10s 1s 100ms 10ms 0.1ms -VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W TA = 25 oC 20 200 Figure12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 0.5 VGS = -10V t, PULSE WIDTH (s) 200 Single PulseMaximum Power Dissipation Typical Characteristics TJ = 25°C unless otherwise noted |
Аналогичный номер детали - FDS9958F085 |
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Аналогичное описание - FDS9958F085 |
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