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FDS9958F085 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS9958F085 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A www.fairchildsemi.com 1 FDS9958_F085 Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ Features Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A RoHS Compliant General Description These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications Load Switch Power Management MOSFET Maximum Ratings TA = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -60 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Note 1a) -2.9 A -Pulsed -12 EAS Single Pulse Avalanche Energy (Note 3) 54 mJ PD Power Dissipation for Dual Operation 2 W Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case 40 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity Q2 Q1 Q2 Q1 G2 S1 G1 S2 D2 D2 D1 D1 5 6 7 8 3 2 1 4 Pin 1 SO-8 D1 D1 D2 D2 S2 S1 G1 G2 November 2008 Qualified to AEC Q101 FDS9958 FDS9958_F085 SO-8 330mm 12mm 2500units |
Аналогичный номер детали - FDS9958F085 |
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Аналогичное описание - FDS9958F085 |
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